0
ACTIVE
Number of channels |
2 |
Isolation rating |
Basic |
Power switch |
IGBT, MOSFET |
Withstand isolation voltage (VISO) (Vrms) |
3000 |
Working isolation voltage (VIOWM) (Vrms) |
990 |
Transient isolation voltage (VIOTM) (VPK) |
4242 |
Peak output current (A) |
6 |
Peak output current (source) (typ) (A) |
4 |
Peak output current (sink) (typ) (A) |
6 |
Features |
Disable |
Output VCC/VDD (min) (V) |
6 |
Output VCC/VDD (max) (V) |
18 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Propagation delay time (µs) |
0.028 |
Input threshold |
CMOS, TTL |
Operating temperature range (°C) |
-40 to 125 |
Rating |
Catalog |
Rise time (ns) |
5 |
Fall time (ns) |
6 |
Undervoltage lockout (typ) (V) |
5 |
SOIC (D)-16-59.4 mm² 9.9 x 6
The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).
These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.
Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.
With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
