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SN54SC6T06-SEP
  • SN54SC6T06-SEP
  • SN54SC6T06-SEP

SN54SC6T06-SEP

ACTIVE

Radiation-tolerant, six-bit inverting open-drain fixed-direction level translator

Texas Instruments SN54SC6T06-SEP Product Info

1 April 2026 3

Parameters

Bits (#)

6

Topology

Open drain

Vin (min) (V)

1.2

Vin (max) (V)

5.5

Applications

GPIO

Features

Balanced outputs, Over-voltage tolerant inputs, Single supply

Prop delay (ns)

12.5

Technology family

SCxT

Supply current (max) (mA)

0.093

Rating

Space

Operating temperature range (°C)

-55 to 125

Package

TSSOP (PW)-14-32 mm² 5 x 6.4

Features

  • Vendor item drawing available, VID V62/24616
  • Total ionizing dose characterized at 30 krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
    • Single event transient (SET) characterized to 43 MeV-cm2 /mg
  • Wide operating range of 1.2V to 5.5V
  • Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC
    • TTL compatible inputs:
      • Up translation:
        • 1.8V – Inputs from 1.2V
        • 2.5V – Inputs from 1.8V
        • 3.3V – Inputs from 1.8V, 2.5V
        • 5.0V – Inputs from 2.5V, 3.3V
      • Down translation:

        • 1.2V – Inputs from 1.8V, 2.5V, 3.3V, 5.0V

        • 1.8V – Inputs from 2.5V, 3.3V, 5.0V
        • 2.5V – Inputs from 3.3V, 5.0V
        • 3.3V – Inputs from 5.0V
  • 5.5V tolerant input pins
  • Output drive up to 25mA AT 5V
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Product traceability
    • Meets NASAs ASTM E595 outgassing specification
  • Vendor item drawing available, VID V62/24616
  • Total ionizing dose characterized at 30 krad (Si)
    • Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
    • Single event transient (SET) characterized to 43 MeV-cm2 /mg
  • Wide operating range of 1.2V to 5.5V
  • Single-supply translating gates at 5/3.3/2.5/1.8/1.2V VCC
    • TTL compatible inputs:
      • Up translation:
        • 1.8V – Inputs from 1.2V
        • 2.5V – Inputs from 1.8V
        • 3.3V – Inputs from 1.8V, 2.5V
        • 5.0V – Inputs from 2.5V, 3.3V
      • Down translation:

        • 1.2V – Inputs from 1.8V, 2.5V, 3.3V, 5.0V

        • 1.8V – Inputs from 2.5V, 3.3V, 5.0V
        • 2.5V – Inputs from 3.3V, 5.0V
        • 3.3V – Inputs from 5.0V
  • 5.5V tolerant input pins
  • Output drive up to 25mA AT 5V
  • Latch-up performance exceeds 250mA per JESD 17
  • Space enhanced plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Product traceability
    • Meets NASAs ASTM E595 outgassing specification

Description

The SN54SC6T06-SEP device contains six independent inverters with open-drain outputs and extended voltage operation to allow for level translation. Each inverter performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8V, 2.5V, 3.3V, and 5V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example 3.3V to 2.5V output).

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