0
ACTIVE
VDS (V) |
12 |
VGS (V) |
10 |
Type |
N-channel |
Configuration |
Dual Common Drain |
Rds(on) at VGS=4.5 V (max) (mΩ) |
5.9 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
12.1 |
VGSTH typ (typ) (V) |
0.95 |
QG (typ) (nC) |
8.4 |
QGD (typ) (nC) |
1.9 |
QGS (typ) (nC) |
2.2 |
ID - silicon limited at TC=25°C (A) |
8 |
ID - package limited (A) |
8 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJE)-6-2.3976 mm² 2.16 x 1.11
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
