0
ACTIVE
VDS (V) |
20 |
VGS (V) |
10 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
1460 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
4000 |
VGSTH typ (typ) (V) |
1.1 |
QG (typ) (nC) |
0.216 |
QGD (typ) (nC) |
0.027 |
QGS (typ) (nC) |
0.077 |
ID - silicon limited at TC=25°C (A) |
0.5 |
ID - package limited (A) |
0.5 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJM)-3-0.414 mm² 0.69 x 0.6
This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.