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CSD15380F3
  • CSD15380F3

CSD15380F3

ACTIVE

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Texas Instruments CSD15380F3 Product Info

1 April 2026 0

Parameters

VDS (V)

20

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

1460

Rds(on) at VGS=2.5 V (max) (mΩ)

4000

VGSTH typ (typ) (V)

1.1

QG (typ) (nC)

0.216

QGD (typ) (nC)

0.027

QGS (typ) (nC)

0.077

ID - silicon limited at TC=25°C (A)

0.5

ID - package limited (A)

0.5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJM)-3-0.414 mm² 0.69 x 0.6

Features

  • Ultra-low CiSS and COSS
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Ultra-low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Ultra-low CiSS and COSS
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Ultra-low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

Description

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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