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UCC27201A-Q1
  • UCC27201A-Q1
  • UCC27201A-Q1
  • UCC27201A-Q1
  • UCC27201A-Q1
  • UCC27201A-Q1

UCC27201A-Q1

ACTIVE

Automotive 3-A, 120-V half bridge gate driver with 8-V UVLO and negative voltage handling

Texas Instruments UCC27201A-Q1 Product Info

1 April 2026 0

Parameters

Bootstrap supply voltage (max) (V)

120

Power switch

MOSFET

Input supply voltage (min) (V)

8

Input supply voltage (max) (V)

17

Peak output current (A)

3

Operating temperature range (°C)

-40 to 150

Undervoltage lockout (typ) (V)

8

Rating

Automotive

Propagation delay time (µs)

0.02

Rise time (ns)

8

Fall time (ns)

7

Iq (mA)

0.001

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

-18

Features

Integrated bootstrap diode, Negative Voltage Handling on Input

TI functional safety category

Functional Safety-Capable

Driver configuration

Noninverting

Package

HSOIC (DDA)-8-29.4 mm² 4.9 x 6

Features

  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Negative voltage handling on HS: -18V
  • Drives two N-channel MOSFETs in high-side/low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching
  • Undervoltage lockout for high-side and low-side driver
  • Offered in 8-pin PowerPad™ SOIC-8 (DDA)
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Negative voltage handling on HS: -18V
  • Drives two N-channel MOSFETs in high-side/low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching
  • Undervoltage lockout for high-side and low-side driver
  • Offered in 8-pin PowerPad™ SOIC-8 (DDA)

Description

The UCC27201A-Q1 high frequency N-Channel MOSFET driver includes a 120V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turn-on and turn-off of each other. In order to improve performance in noisy power supply environments the UCC27201A-Q1 has the ability to withstand an absolute maximum of -18V on its HS pin.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27201A-Q1 has TTL-compatible thresholds and is offered in an 8-pin SOIC with a thermal pad.

The UCC27201A-Q1 high frequency N-Channel MOSFET driver includes a 120V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turn-on and turn-off of each other. In order to improve performance in noisy power supply environments the UCC27201A-Q1 has the ability to withstand an absolute maximum of -18V on its HS pin.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27201A-Q1 has TTL-compatible thresholds and is offered in an 8-pin SOIC with a thermal pad.

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