0
ACTIVE
Bootstrap supply voltage (max) (V) |
100 |
Power switch |
GaNFET, MOSFET |
Input supply voltage (min) (V) |
4.5 |
Input supply voltage (max) (V) |
5.5 |
Peak output current (A) |
5 |
Operating temperature range (°C) |
-40 to 125 |
Undervoltage lockout (typ) (V) |
4 |
Rating |
Automotive |
Propagation delay time (µs) |
0.03 |
Rise time (ns) |
7 |
Fall time (ns) |
3.5 |
Iq (mA) |
0.15 |
Input threshold |
TTL |
Channel input logic |
TTL |
Switch node voltage (V) |
-5 |
Features |
Bootstrap supply voltage clamp, Split outputs on high and low side |
Driver configuration |
Half bridge |
WSON (DPR)-10-16 mm² 4 x 4
The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
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