0
ACTIVE
Vn at 1 kHz (nV√Hz) |
0.8 |
Breakdown voltage (V) |
40 |
VDS (V) |
40 |
VGS (V) |
-40 |
VGSTH typ (typ) (V) |
-1.2 |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 125 |
SOT-23 (DBV)-5-8.12 mm² 2.9 x 2.8
Low input capacitance: 24 pF at V DS = 5 V
High gate-to-drain and gate-to-source breakdown voltage: –40 V
High transconductance: 68 mS
Packages: Small SC70 and SOT-23
The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 µA to 20 mA. When biased at 5 mA, the device yields 0.8 nV/√ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high-leakage, nonlinear, external diodes.
The JFE150 can withstand a high drain-to-source voltage of 40 V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The temperature range is specified from –40°C to +125°C. The device is offered in 5-pin SOT-23 and SC70 packages.
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