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CSD16327Q3
  • CSD16327Q3
  • CSD16327Q3

CSD16327Q3

ACTIVE

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm

Texas Instruments CSD16327Q3 Product Info

1 April 2026 0

Parameters

VDS (V)

25

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

4.8

VGSTH typ (typ) (V)

1.2

QG (typ) (nC)

6.2

QGD (typ) (nC)

1.1

QGS (typ) (nC)

1.8

ID - silicon limited at TC=25°C (A)

112

ID - package limited (A)

60

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON-CLIP (DQG)-8-10.89 mm² 3.3 x 3.3

Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

Description

This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

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