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SIDC30D120H8
  • SIDC30D120H8

SIDC30D120H8

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Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

Infineon Technologies SIDC30D120H8 Product Info

16 April 2026 0

Parameters

I(FSM) max

100 A

IF max

50 A

IR max

27 µA

Technology

Emitter Controlled Diode Fast

VDS max

1200 V

VF

1.6 V

Features

  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient

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