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IRL40B212
  • IRL40B212

IRL40B212

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon Technologies IRL40B212 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.97

ID (@25°C) max

254 A

Mounting

THT

Package

TO-220

Polarity

N

Ptot max

231 W

Qgd

46 nC

QG (typ @4.5V)

91 nC

RDS (on) (@10V) max

1.9 mΩ

RDS (on) (@4.5V) max

2.4 mΩ

RthJC max

0.65 K/W

Tj max

175 °C

VDS max

40 V

VGS(th) range

1 V to 2.4 V

VGS(th)

1.7 V

VGS max

20 V

Features

  • High-current rating
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Industry standard through-hole power package
  • Wide portfolio available

Description

  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Standard pinout allows for drop in replacement
  • Provides designers flexibility in selecting the most optimal device for their application

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