Product
0
IPT026N12NM6
  • IPT026N12NM6

IPT026N12NM6

Active and preferred

This is a normal level 120 V MOSFET in TO-Leadless packaging with 2.6 mOhm on-resistance. Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on), up to 66% better FOMg, up to 90% better Qrr and up to 35% better FOMoss. IPT026N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Infineon Technologies IPT026N12NM6 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

224 A

Operating Temperature range

-55 °C to 175 °C

Package

TOLL (HSOF-8)

Polarity

N

QG (typ @10V)

70 nC

RDS (on) (@10V) max

2.6 mΩ

VDS max

120 V

VGS(th) range

2.6 V to 3.6 V

VGS(th)

3.1 V

Apps

Cordless power tools and outdoor power equipment

Features

  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant & halogen-free

Description

  • High efficiency
  • Increased power density
  • Robust, reliable performance
  • Increased operating margin
  • Environmentally friendly

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8