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IPB072N15N3 G
  • IPB072N15N3 G

IPB072N15N3 G

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The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon Technologies IPB072N15N3 G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.19

Ciss

5470 pF

Coss

638 pF

ID (@25°C) max

100 A

IDpuls max

400 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Polarity

N

Ptot max

300 W

QG (typ @10V)

70 nC

RDS (on) (@10V) max

7.2 mΩ

Rth

0.5 K/W

VDS max

150 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Apps

Medium voltage IBC (48 V), Light electric vehicle solutions, Telecommunications infrastructure

Features

  • Excellent switching performance
  • World’s lowest R DS(on)
  • Low Q g and Q gd
  • Excellent gate charge
  • RoHS compliant-halogen free
  • MSL1 rated

Description

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

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