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IAUCN04S7L018D
  • IAUCN04S7L018D

IAUCN04S7L018D

Active and preferred

The new automotive OptiMOS™-7 40 V dual SSO8 MOSFET is offered in our reliable SSO8 5x6mm2 SMD package. It features two independent N-channel MOSFETs integrated in one package for PCB area savings. It is designed specifically for high performance, high quality and the robustness needed for demanding and cost-efficient power automotive applications. The new portfolio provides a wide RDS range from 1.94 mΩ to 5.59 mΩ combined with an increased current rating of 60 A.

Infineon Technologies IAUCN04S7L018D Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

Family

Automotive MOSFET

ID (@25°C) max

60 A

Launch year

2026

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N+N

QG (typ @10V) max

56 nC

QG (typ @10V)

43 nC

Qualification

Automotive

RDS (on) (@10V) max

1.94 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

1.2 V to 1.8 V

VGS(th)

1.5 V

Features

  • 5x6 mm² small footprint
  • 60 A high current capability
  • Leading-edge OptiMOS™7 40 V
  • RDS(on) from 1.94 mΩ to 5.59 mΩ
  • Leadless package with Cu-clip
  • High avalanche capability

Description

  • Highest power & current density
  • High thermal capacity leadframe package
  • Reduced conduction losses
  • Optimized switching behavior
  • Reduced form factor
  • Industry standard package
  • JEDEC standard PG-TDSON-8

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