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IRF7341G
  • IRF7341G

IRF7341G

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The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon Technologies IRF7341G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.64

ID (@25°C) max

5.1 A

Moisture Sensitivity Level

1

Operating Temperature range

-55 °C to 175 °C

Package

SO-8

Polarity

N+N

Ptot (@ TA=25°C) max

2.4 W

Qgd (typ)

7.3 nC

QG (typ @10V)

29 nC

RDS (on) (@4.5V) max

65 mΩ

RDS (on) (@10V) max

50 mΩ

RthJA max

62.5 K/W

Special Features

Logic Level

Tj max

175 °C

VDS max

55 V

VGS(th) min

1 V

VGS max

20 V

Apps

Power transmission and distribution

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard surface-mount power

Description

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification level
  • High performance, low-frequency
  • Standard pinout, drop-in replacement

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