Product
0
IPB17N25S3-100
  • IPB17N25S3-100

IPB17N25S3-100

Active and preferred

Infineon Technologies IPB17N25S3-100 Product Info

16 April 2026 1

Parameters

Budgetary Price €/1k

0.82

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany, Malaysia

ID (@25°C) max

17 A

IDpuls max

56 A

Launch year

2012

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-3)

Planned to be available until at least

2030

Polarity

N

Ptot max

107 W

QG (typ @10V)

14 nC

QG (typ @10V) max

19 nC

Qualification

Automotive

RDS (on) (@10V) max

100 mΩ

RthJC max

1.4 K/W

Technology

OptiMOS™T

VDS max

250 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Low RDS(on) in trench tech
  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimal total gate charge
  • Smaller drivers output stages

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8