Product
0
IPB407N30N
  • IPB407N30N

IPB407N30N

OptiMOS™ 300 V MOSFETs, incorporating fast diode technology, are especially optimized for body diode hard commutation. The devices not only demonstrate impressive on-state resistance (R DS(on)) and figure of merit (FOM), but also provide high system reliability through the lowest reverse recovery charge (Q rr) available on the market.

Infineon Technologies IPB407N30N Product Info

16 April 2026 1

Parameters

Battery voltage

144-200 V

Budgetary Price €/1k

3.91

Ciss

5400 pF

Coss

281 pF

ID (@25°C) max

44 A

IDpuls max

176 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Pin Count

3 Pins

Polarity

N

Ptot max

300 W

QG (typ @10V)

65 nC

RDS (on) (@10V) max

40.7 mΩ

RthJA max

62 K/W

RthJC max

0.5 K/W

Special Features

Fast Diode

VDS max

300 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Apps

Electric vehicle drivetrain system, DIN rail power supply solutions

Features

  • Fast diode technology
  • Industry best R DS(on) >58% lower FOM
  • Hard commutation ruggedness
  • Optimized hard switching behavior

Description

  • Highest efficiency and power density
  • Board space and system cost reduction
  • High system reliability
  • Best switching performance
  • Easy-to-design products

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8