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IPA041N04N G
  • IPA041N04N G

IPA041N04N G

New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.

Infineon Technologies IPA041N04N G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.45

Ciss

3400 pF

Coss

980 pF

ID (@25°C) max

70 A

IDpuls max

280 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220 FullPAK

Pin Count

3 Pins

Polarity

N

Ptot max

35 W

QG (typ @10V)

42 nC

RDS (on) (@10V) max

4.1 mΩ

RthJA max

62 K/W

RthJC max

4.3 K/W

Rth

4.3 K/W

VDS max

40 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Features

  • Optimized for synchronous rectification
  • 15% lower R than alternative devices
  • 31% FOM over similar devices
  • Integrated Schottky-like diode
  • RoHS compliant - halogen free
  • MSL1 rated

Description

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

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