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IMTA65R060M2H
  • IMTA65R060M2H

IMTA65R060M2H

Active and preferred

The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a  performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance.  It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.

Infineon Technologies IMTA65R060M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

37 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

Thin-TOLL

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

75 mΩ

RDS (on) (@ Tj = 25°C)

60 mΩ

RthJC max

0.91 K/W

Technology

CoolSiC™ G2

VDS max

650 V

Apps

Complete system solutions for smart TVs, Home appliances, Microinverter solutions, Heating ventilation and air conditioning (HVAC), Power conversion

Features

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS(off)=0)
  • Pin to pin compatible with all 8x8 FETs
  • Improved package interconnect with .XT
  • 4x improvement in TCoB

Description

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability and longer lifetime
  • Enables top efficiency and power density
  • Small footprint to more power density
  • Most compact daughter card design

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