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IMBG65R083M1H
  • IMBG65R083M1H

IMBG65R083M1H

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R083M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in mid power applications. It is optimized to enable max system performance, compactness and reliability.

Infineon Technologies IMBG65R083M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

59 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK 7-pin

Polarity

N

Ptot max

126 W

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

111 mΩ

RDS (on) (@ Tj = 25°C)

83 mΩ

Technology

CoolSiC™ G1

VDS max

650 V

Apps

DIN rail power supply solutions, Power conversion

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Description

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability
  • Kelvin source
  • Kelvin source

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