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IMLT65R050M2H
  • IMLT65R050M2H

IMLT65R050M2H

Active and preferred

The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.

Infineon Technologies IMLT65R050M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

47 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

TOLT

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

62 mΩ

RDS (on) (@ Tj = 25°C)

50 mΩ

RthJC max

0.66 K/W

Technology

CoolSiC™ G2

VDS max

650 V

Apps

Battery energy storage (BESS), EV charging, Solid-state circuit breaker (SSCB), 1-phase string inverter solutions, Microinverter solutions, Power conversion

Features

  • Excellent figures of merit (FOMs)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS(off)=0)
  • Lower thermal resistance
  • Improved package interconnect with .XT
  • Top-side cooling

Description

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Simplifies assembly and cooling
  • Water cooling "ready"
  • Allows designs without fan or heatsink
  • Lower stray inductances
  • Better gate control

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