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IMZA75R060M1H
  • IMZA75R060M1H

IMZA75R060M1H

The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.

Infineon Technologies IMZA75R060M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

32 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO247 4-pin (asymmetric leads)

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

82 mΩ

RDS (on) (@ Tj = 25°C)

60 mΩ

Technology

CoolSiC™ G1

VDS max

750 V

Apps

Server power supply units (PSU), AC-DC power conversion for telecommunications infrastructure, Battery energy storage (BESS), EV charging, Solid-state circuit breaker (SSCB), 1-phase string inverter solutions, Uninterruptible power supplies (UPS)

Features

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high VGSth
  • 100% avalanche tested
  • Infineon die attach technology

Description

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving

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