Product
0
AIMZH120R030M1T
  • AIMZH120R030M1T

AIMZH120R030M1T

Active and preferred

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Infineon Technologies AIMZH120R030M1T Product Info

16 April 2026 0

Parameters

ID (@25°C) max

69 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Planned to be available until at least

2033

Polarity

N

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

30 mΩ

Technology

CoolSiC™ G1

VDS max

1200 V

Features

  • Very low switching losses
  • Increased turn-on voltage VGS(on)= 20 V
  • Best in class switching energy
  • Lowest device capacitances
  • low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on
  • Reduced total gate charge QGtot for lower driving power and losses
  • .XT die attach technology for best in class thermal performance
  • Sense pin for optimized switching performance
  • Suitable for HV creepage requirements
  • Thinner leads for reduced risk of solder bridges

Description

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8