HMC349AMS8G

PRODUCTION

High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz

Analog Devices HMC349AMS8G Product Info

10 February 2026 6

Features

Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
- 1 dB power compression (P1dB): 34 dBm typical
- Third-order intercept (IP3): 52 dBm typical
High power handling
- 33.5 dBm through path
- 26.5 dBm terminated path

Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad (MINI_SO_EP)

Part details & applications

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.

The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.

The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.

The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.

Applications

Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment

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