0
ACTIVE
Number of channels |
1 |
Isolation rating |
Reinforced |
Power switch |
IGBT, MOSFET, SiCFET |
Withstand isolation voltage (VISO) (Vrms) |
5000 |
Working isolation voltage (VIOWM) (Vrms) |
1500 |
Transient isolation voltage (VIOTM) (VPK) |
7000 |
Peak output current (A) |
17 |
Peak output current (source) (typ) (A) |
17 |
Peak output current (sink) (typ) (A) |
17 |
Features |
UVLO reference to ground |
Output VCC/VDD (min) (V) |
13.2 |
Output VCC/VDD (max) (V) |
33 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
15 |
Propagation delay time (µs) |
0.065 |
Input threshold |
CMOS |
Operating temperature range (°C) |
-40 to 125 |
Rating |
Automotive |
Bootstrap supply voltage (max) (V) |
2121 |
Rise time (ns) |
26 |
Fall time (ns) |
22 |
Undervoltage lockout (typ) (V) |
12 |
TI functional safety category |
Functional Safety-Capable |
SOIC (DWV)-8-67.275 mm² 5.85 x 11.5
The UCC5390-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5390-Q1 has its UVLO2 referenced to GND2, which facilitates bipolar supplies and optimizes SiC and IGBT switching behavior and robustness.
The UCC5390-Q1 is available in 8.5mm SOIC-8 (DWV) package and can support isolation voltage up to 5kVRMS. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. With its high drive strength and true UVLO detection, this device is a good fit for driving IGBTs and SiC MOSFETs in applications such as on-board chargers and traction inverters.
Compared to an optocoupler, the UCC5390-Q1 has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
