0
ACTIVE
Bits (#) |
6 |
Data rate (max) (Mbps) |
120 |
Topology |
Open drain, Push-Pull |
Direction control (typ) |
Auto-direction |
Vin (min) (V) |
1.7 |
Vin (max) (V) |
3.3 |
Vout (min) (V) |
0.74 |
Vout (max) (V) |
3.6 |
Applications |
SIM Card |
Features |
Dual LDO, Edge rate accelerator |
Technology family |
TXS |
Supply current (max) (mA) |
0.005 |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 85 |
VQFN (RGE)-24-16 mm² 4 x 4
The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.
The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.