0
Number of channels |
1 |
Vrwm (V) |
9 |
Bi-/uni-directional |
Bi-directional |
Package name |
DFN1006 |
Peak pulse power (8/20 μs) (max) (W) |
90 |
IO capacitance (typ) (pF) |
10 |
IEC 61000-4-2 contact (±V) |
20000 |
IEC 61000-4-5 (A) |
5.5 |
Clamping voltage (V) |
13 |
Dynamic resistance (typ) |
0.5 |
Interface type |
Audio, General purpose |
Breakdown voltage (min) (V) |
9.5 |
IO leakage current (max) (nA) |
100 |
Rating |
Automotive |
Operating temperature range (°C) |
-40 to 125 |
X1SON (DPY)-2-0.6 mm² 1 x 0.6
The TPD1E10B09-Q1 device is a bidirectional electrostatic discharge (ESD) transient voltage suppression (TVS) diode in a small 0402 industry standard package. This TVS protection diode is convenient for component placement in space-saving applications and features low R DYN and high IEC rating. The TPD1E10B09-Q1 is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4) offering ±20-kV contact discharge and ±20-kV IEC air-gap protection. ESD voltages can easily reach 5-kV and during extreme conditions these voltages can be significantly higher, causing damages to many integrated circuits. For example, in a low humidity environment voltages can exceed 20-kV.
The low dynamic resistance (0.5 Ω) and low clamping voltage (13 V at 1-A IPP) allows for system level protection against transient events, providing robust protection on designs that are exposed to ESD events. This device also features a 10-pF IO capacitance making it an excellent choice for audio lines, push buttons, memory interfaces, or GPIOs.
This device is also available without automotive qualification: TPD1E10B09.