0
ACTIVE
Number of channels |
2 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) |
5.5 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) |
1.7 |
Vos (offset voltage at 25°C) (max) (mV) |
0.5 |
Offset drift (typ) (µV/°C) |
1 |
GBW (typ) (MHz) |
0.006 |
Features |
Cost Optimized, EMI Hardened |
Slew rate (typ) (V/µs) |
0.0015 |
Rail-to-rail |
In to V-, Out |
Iq per channel (typ) (mA) |
0.000425 |
Vn at 1 kHz (typ) (nV√Hz) |
450 |
CMRR (typ) (dB) |
98 |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 125 |
Iout (typ) (A) |
0.0047 |
Architecture |
CMOS |
Input common mode headroom (to negative supply) (typ) (V) |
0 |
Input common mode headroom (to positive supply) (typ) (V) |
-0.9 |
Output swing headroom (to negative supply) (typ) (V) |
0.0025 |
Output swing headroom (to positive supply) (typ) (V) |
-0.0035 |
VSSOP (DGK)-8-14.7 mm² 3 x 4.9
The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.
The TLV8811 (single) and TLV8812 (dual) channel versions are available in industry standard 5-pin SOT-23 and 8-pin VSSOP packages respectively.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
