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LM5109B-Q1
  • LM5109B-Q1
  • LM5109B-Q1

LM5109B-Q1

ACTIVE

Automotive 1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

Texas Instruments LM5109B-Q1 Product Info

1 April 2026 3

Parameters

Bootstrap supply voltage (max) (V)

90

Power switch

MOSFET

Input supply voltage (min) (V)

8

Input supply voltage (max) (V)

14

Peak output current (A)

1

Operating temperature range (°C)

-40 to 125

Undervoltage lockout (typ) (V)

8

Rating

Automotive

Propagation delay time (µs)

0.03

Rise time (ns)

15

Fall time (ns)

15

Iq (mA)

0.01

Input threshold

TTL

Channel input logic

TTL

Switch node voltage (V)

-1

Driver configuration

Dual inputs

Package

WSON (NGT)-8-16 mm² 4 x 4

Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package

Description

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.

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