0
VDS (V) |
60 |
VGS (V) |
20 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=10 V (max) (mΩ) |
5.9 |
Rds(on) at VGS=4.5 V (max) (mΩ) |
8.5 |
VGSTH typ (typ) (V) |
1.9 |
QG (typ) (nC) |
29 |
QGD (typ) (nC) |
5.4 |
QGS (typ) (nC) |
6.6 |
ID - silicon limited at TC=25°C (A) |
103 |
ID - package limited (A) |
100 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
VSONP (DQJ)-8-29.4 mm² 4.9 x 6
This 4.7 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.