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LF356-MIL
  • LF356-MIL
  • LF356-MIL

LF356-MIL

ACTIVE

Military-grade, single, 30-V, 5-MHz, FET-input operational amplifier

Texas Instruments LF356-MIL Product Info

1 April 2026 0

Parameters

Number of channels

1

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

36

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

10

Rail-to-rail

In to V+

GBW (typ) (MHz)

5

Slew rate (typ) (V/µs)

12

Vos (offset voltage at 25°C) (max) (mV)

2

Iq per channel (typ) (mA)

5

Vn at 1 kHz (typ) (nV√Hz)

12

Rating

Military

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

3

CMRR (typ) (dB)

100

Iout (typ) (A)

0.025

Architecture

FET

Package

TO-CAN (LMC)-8-80.2816 mm² 8.96 x 8.96

Features

  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%: 1.5 µs
    • Fast Slew Rate: 12 V/µs
    • Wide Gain Bandwidth: 5 MHz
    • Low Input Noise Voltage: 12 nV/√Hz
  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%: 1.5 µs
    • Fast Slew Rate: 12 V/µs
    • Wide Gain Bandwidth: 5 MHz
    • Low Input Noise Voltage: 12 nV/√Hz

Description

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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