0
Vn at 1 kHz (nV√Hz) |
0.9 |
Breakdown voltage (V) |
40 |
VDS (V) |
40 |
VGS (V) |
-40 |
VGSTH typ (typ) (V) |
1.2 |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 125 |
SOIC (D)-8-29.4 mm² 4.9 x 6
Low input capacitance: 13 pF at V DS = 5 V
High gate-to-drain and gate-to-source breakdown voltage: –40 V
High transconductance: 30 mS
Packages: SOIC, 2-mm × 2-mm WSON