0
ACTIVE
Number of channels |
2 |
Vrwm (V) |
18 |
Bi-/uni-directional |
Bi-directional |
Package name |
SOT-23-3 |
Peak pulse power (8/20 μs) (max) (W) |
133 |
IO capacitance (typ) (pF) |
4 |
IEC 61000-4-2 contact (±V) |
30000 |
IEC 61000-4-5 (A) |
5.5 |
Features |
ESD Protection |
Clamping voltage (V) |
23 |
Dynamic resistance (typ) |
0.3 |
Interface type |
BMS, RS-485/432/422/232 |
Breakdown voltage (min) (V) |
20 |
IO leakage current (max) (nA) |
50 |
Rating |
Automotive |
Operating temperature range (°C) |
-55 to 150 |
SOT-23 (DBZ)-3-6.9204 mm² 2.92 x 2.37
The ESD652-Q1 is a bidirectional ESD protection diode for battery management systems and other automotive applications. The ESD652-Q1 is rated to dissipate ESD strikes beyond the maximum level specified in the IEC 61000-4-2 international standard (±30kV Contact, ±30kV Air-gap). The device can clamp 8/20µs surges with peak pulse currents up to 5.5A in accordance with the IEC 61000-4-5 standard.
This device features a 4pF (typical) IO capacitance enabling high-speed interface protection. The low dynamic resistance and low clamping voltage help protect systems against transient events. This protection is key as automotive systems require a high level of robustness and reliability when they control safety devices.
The ESD652-Q1 is available in a small leaded SOT-23 (DBZ) package.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
