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DRV7308
  • DRV7308

DRV7308

ACTIVE

650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense

Texas Instruments DRV7308 Product Info

1 April 2026 4

Parameters

Rating

Catalog

Architecture

3-phase, Integrated FET

Control interface

6xPWM

Peak output current (A)

5

RDS(ON) (HS + LS) (Ω)

0.25

VDS (max) (V)

650

Features

Integrated GaN FET

Operating temperature range (°C)

-40 to 125

Package

VQFN (REN)-65-144 mm² 12 x 12

Features

  • Three-phase PWM motor driver with integrated 650V enhancement mode GaN FETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra-low propagation delay < 135ns, Ultra-low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • Integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 100kHz hard switching
  • Integrates an amplifier for current sensing
  • Supports 3.3V and 5V logic inputs, up to 20V
  • BRAKE pin to turn on all low side GaN FETs
  • Integrated temperature sensor
  • >1.6mm clearance of motor phase (OUTx) to the adjacent pins.
  • 2mm clearance between VM and GND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for low-side GaN FET
    • Over temperature protection
    • PWM adaptive dead time insertion
    • Current limit protection for all three phases
    • Fault condition indication pin (nFAULT)
  • Three-phase PWM motor driver with integrated 650V enhancement mode GaN FETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra-low propagation delay < 135ns, Ultra-low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • Integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 100kHz hard switching
  • Integrates an amplifier for current sensing
  • Supports 3.3V and 5V logic inputs, up to 20V
  • BRAKE pin to turn on all low side GaN FETs
  • Integrated temperature sensor
  • >1.6mm clearance of motor phase (OUTx) to the adjacent pins.
  • 2mm clearance between VM and GND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for low-side GaN FET
    • Over temperature protection
    • PWM adaptive dead time insertion
    • Current limit protection for all three phases
    • Fault condition indication pin (nFAULT)

Description

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit eliminates the need for an external bootstrap diode.

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