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CSD87503Q3E
  • CSD87503Q3E
  • CSD87503Q3E

CSD87503Q3E

ACTIVE

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm

Texas Instruments CSD87503Q3E Product Info

1 April 2026 3

Parameters

VDS (V)

30

VGS (V)

20

Type

N-channel

Configuration

Dual Common Source

Rds(on) at VGS=10 V (max) (mΩ)

16.9

Rds(on) at VGS=4.5 V (max) (mΩ)

21.9

VGSTH typ (typ) (V)

1.7

QG (typ) (nC)

13.4

QGD (typ) (nC)

5.8

QGS (typ) (nC)

4.8

ID - silicon limited at TC=25°C (A)

10

ID - package limited (A)

10

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON (DTD)-8-10.89 mm² 3.3 x 3.3

Features

  • Dual N-Ch Common Source MOSFETs
  • Optimized for 5-V Gate Drive
  • Low-Thermal Resistance
  • Low Qg and Qgd
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
  • Dual N-Ch Common Source MOSFETs
  • Optimized for 5-V Gate Drive
  • Low-Thermal Resistance
  • Low Qg and Qgd
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

Description

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.

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