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CSD23285F5
  • CSD23285F5

CSD23285F5

ACTIVE

-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection

Texas Instruments CSD23285F5 Product Info

1 April 2026 0

Parameters

VDS (V)

-12

VGS (V)

-6

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

35

Rds(on) at VGS=2.5 V (max) (mΩ)

47

VGSTH typ (typ) (V)

-0.65

QG (typ) (nC)

3.2

QGD (typ) (nC)

0.48

QGS (typ) (nC)

0.66

ID - silicon limited at TC=25°C (A)

3.3

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJK)-3-1.0877 mm² 1.49 x 0.73

Features

  • Low on-resistance
  • Low Qg and Qgd
  • Ultra-small footprint
    • 1.53 mm × 0.77 mm
    • 0.50-mm pad pitch
  • Low profile
    • 0.36-mm height
  • Integrated ESD protection diode
    • Rated > 4 kV HBM
    • Rated > 2 kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Low Qg and Qgd
  • Ultra-small footprint
    • 1.53 mm × 0.77 mm
    • 0.50-mm pad pitch
  • Low profile
    • 0.36-mm height
  • Integrated ESD protection diode
    • Rated > 4 kV HBM
    • Rated > 2 kV CDM
  • Lead and halogen free
  • RoHS compliant

Description

This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

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