0
ACTIVE
VDS (V) |
-12 |
VGS (V) |
-6 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
35 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
47 |
VGSTH typ (typ) (V) |
-0.65 |
QG (typ) (nC) |
3.2 |
QGD (typ) (nC) |
0.48 |
QGS (typ) (nC) |
0.66 |
ID - silicon limited at TC=25°C (A) |
3.3 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJK)-3-1.0877 mm² 1.49 x 0.73
This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.