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CSD18536KTT
  • CSD18536KTT

CSD18536KTT

ACTIVE

60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm

Texas Instruments CSD18536KTT Product Info

1 April 2026 1

Parameters

VDS (V)

60

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

1.6

Rds(on) at VGS=4.5 V (max) (mΩ)

2.2

VGSTH typ (typ) (V)

1.8

QG (typ) (nC)

108

QGD (typ) (nC)

14

QGS (typ) (nC)

18

ID - silicon limited at TC=25°C (A)

349

ID - package limited (A)

200

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 175

Package

TO-263 (KTT)-2-153.416 mm² 10.16 x 15.1

Features

  • Ultralow Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Pb-free terminal plating
  • RoHS compliant
  • Halogen free
  • D2PAK plastic package
  • Ultralow Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Pb-free terminal plating
  • RoHS compliant
  • Halogen free
  • D2PAK plastic package

Description

This 60V, 1.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 60V, 1.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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