0
ACTIVE
VDS (V) |
30 |
VGS (V) |
20 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=10 V (max) (mΩ) |
24 |
Rds(on) at VGS=4.5 V (max) (mΩ) |
29 |
VGSTH typ (typ) (V) |
1.6 |
QG (typ) (nC) |
2.4 |
QGD (typ) (nC) |
0.6 |
QGS (typ) (nC) |
0.9 |
ID - silicon limited at TC=25°C (A) |
7.6 |
ID - package limited (A) |
22 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
WSON (DQK)-6-4 mm² 2 x 2
This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
