0
VDS (V) |
30 |
VGS (V) |
20 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=10 V (max) (mΩ) |
10.8 |
Rds(on) at VGS=4.5 V (max) (mΩ) |
15.5 |
VGSTH typ (typ) (V) |
1.6 |
QG (typ) (nC) |
2.8 |
QGD (typ) (nC) |
0.8 |
QGS (typ) (nC) |
1.2 |
ID - silicon limited at TC=25°C (A) |
65 |
ID - package limited (A) |
65 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
VSONP (DQJ)-8-29.4 mm² 4.9 x 6
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.