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CSD16301Q2
  • CSD16301Q2

CSD16301Q2

ACTIVE

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Texas Instruments CSD16301Q2 Product Info

1 April 2026 2

Parameters

VDS (V)

25

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

29

VGSTH typ (typ) (V)

1.1

QG (typ) (nC)

2

QGD (typ) (nC)

0.4

QGS (typ) (nC)

0.6

ID - silicon limited at TC=25°C (A)

20

ID - package limited (A)

5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

WSON (DQK)-6-4 mm² 2 x 2

Features

  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package

Description

This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package.

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.

This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package.

.

.

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