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IQD005N04NM6CG
  • IQD005N04NM6CG

IQD005N04NM6CG

Active and preferred

The power MOSFET IQD005N04NM6CG 40 V normal-level comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(on) of 0.5 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .

Infineon Technologies IQD005N04NM6CG Product Info

16 April 2026 1

Parameters

Budgetary Price €/1k

1.43

ID (@25°C) max

610 A

IDpuls max

2440 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 5x6 Source-Down

Polarity

N

QG (typ @10V)

129 nC

RDS (on) (@10V) max

0.47 mΩ

Special Features

Center-Gate

VDS max

40 V

VGS(th) range

1.8 V to 2.8 V

VGS(th)

2.3 V

Features

  • OptiMOS™ 40 V with outstanding FOMs
  • Source-Down package with thermal
  • Source-Down with maximized chip ratio
  • Source-Down in Center-Gate footprint

Description

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Center-Gate for optimal parallelization
  • Lowest RDS(on) on 5x6 mm² PCB
  • Enhanced thermal management
  • Minimal parasitics, optimal switching
  • Industry standard package

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