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IQFH55N04NM6
  • IQFH55N04NM6

IQFH55N04NM6

Active and preferred

Infineon Technologies IQFH55N04NM6 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.9

ID (@25°C) max

451 A

IDpuls max

1804 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 8x6

Polarity

N

QG (typ @10V)

118 nC

RDS (on) (@10V) max

0.55 mΩ

VDS max

40 V

VGS(th) range

1.8 V to 2.8 V

VGS(th)

2.3 V

Apps

Light electric vehicle solutions, E-bike solutions, Multicopters and drones, Power tools, Robotics, Battery management systems (BMS)

Features

  • Cutting edge OptiMOS™ silicon technology
  • High chip/package ratio
  • Ultra high currents in compact footprint
  • Ultra-low package parasitics
  • Optimized lead-frame and Cu-Clip design
  • Footprint compatibility with PQFN 5x6
  • Compact layout with less paralleling

Description

  • Minimized conduction losses
  • High power capability
  • Superior device performance
  • Reduced voltage overshoot
  • Superior thermal performance
  • Re-use board for multiple power levels
  • Superior switching performance/EMI

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