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IRF100P219
  • IRF100P219

IRF100P219

Active and preferred

Infineon Technologies IRF100P219 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.06

ID (@25°C) max

316 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-247

Polarity

N

Ptot max

341 W

Qgd

40 nC

QG (typ @10V)

168 nC

RDS (on) max

1.7 mΩ

RDS (on) (@10V) max

1.7 mΩ

RthJC max

44 K/W

Tj max

175 °C

VDS max

100 V

VGS max

20 V

Apps

Telecommunications infrastructure, Battery energy storage (BESS), DIN rail power supply solutions, 1-phase string inverter solutions, Uninterruptible power supplies (UPS)

Description

  • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dv/dt and di/dt Capability
  • Lead-Free; RoHS Compliant; Halogen-Free

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