Product
0
BAT15-02ELS
  • BAT15-02ELS

BAT15-02ELS

Active and preferred

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Infineon Technologies BAT15-02ELS Product Info

16 April 2026 0

Parameters

C @VR=0V

0.2 pF

Configuration

Single

IF max

110 mA

VF max

0.32 V

VF

0.25 V

VR max

4 V

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8