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IMW65R010M2H
  • IMW65R010M2H

IMW65R010M2H

Active and preferred

The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Infineon Technologies IMW65R010M2H Product Info

16 April 2026 0

Parameters

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO247

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

13 mΩ

RDS (on) (@ Tj = 25°C)

10 mΩ

RthJC max

0.87 K/W

Technology

CoolSiC™ G2

VDS max

650 V

Apps

Battery energy storage (BESS), EV charging, Solid-state circuit breaker (SSCB), 1-phase string inverter solutions, Power conversion

Features

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGSoff=0)
  • Best immunity against turn-on effects
  • Improved package interconnect with .XT

Description

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Ease-of-use
  • Full compatibility with existing vendors
  • Allows designs without fan or heatsink

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