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IPI50N10S3L-16
  • IPI50N10S3L-16

IPI50N10S3L-16

Infineon Technologies IPI50N10S3L-16 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.98

Country of Assembly ((Last BE site, current, subject to change))

Malaysia

Country of Diffusion ((Last FE site, current, subject to change))

Germany, Malaysia

ID (@25°C) max

50 A

IDpuls max

200 A

Operating Temperature range

-55 °C to 175 °C

Package

I2PAK (PG-TO262-3)

Polarity

N

Ptot max

100 W

QG (typ @10V) max

64 nC

QG (typ @10V)

49 nC

Qualification

Automotive

RDS (on) (@10V) max

15.4 mΩ

RthJC max

1.5 K/W

Technology

OptiMOS™T

VDS max

100 V

VGS(th)

1.7 V

VGS(th) max

2.4 V

VGS(th) min

1.2 V

Features

  • N-Channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Highest current capability 180A
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

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