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IPTG111N20NM3FD
  • IPTG111N20NM3FD

IPTG111N20NM3FD

The OptiMOS™ 3 power MOSFET 200 V IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.

Infineon Technologies IPTG111N20NM3FD Product Info

16 April 2026 0

Parameters

Battery voltage

96-140 V

Budgetary Price €/1k

3.13

ID (@25°C) max

108 A

IDpuls max

432 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

TOLG (HSOG-8)

Pin Count

8 Pins

Polarity

N

Ptot max

375 W

QG (typ @10V)

65 nC

RDS (on) (@10V) max

11.1 mΩ

VDS max

200 V

VGS(th) range

2 V to 4 V

VGS(th)

3 V

Apps

Power optimizer solutions for scalable PV systems

Features

  • Best in class technology
  • High current rating >300 A
  • Low ringing and voltage overshoot
  • 60% board space reduction
  • Gullwing leads

Description

  • High performance capability
  • High system reliability
  • High efficiency and lower EMI
  • Optimized board utilization
  • High thermal cycling on board handling

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