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IPD30N12S3L-31
  • IPD30N12S3L-31

IPD30N12S3L-31

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Infineon Technologies IPD30N12S3L-31 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.37, 0.37

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, China, Germany, Malaysia

ID (@25°C) max

30 A

IDpuls max

120 A

Launch year

2016

Operating Temperature range

-55 °C to 175 °C

Package

DPAK (PG-TO252-3)

Planned to be available until at least

2030

Polarity

N

Ptot max

57 W

QG (typ @10V)

24 nC

QG (typ @10V) max

31 nC

Qualification

Automotive

RDS (on) (@10V) max

31 mΩ

RthJC max

2.6 K/W

Technology

OptiMOS™T

VDS max

120 V

VGS(th) range

1.2 V to 2.4 V

VGS(th)

1.7 V

Apps

Electric vehicle drivetrain system, Light electric vehicle solutions

Features

  • OptiMOS™ power MOSFET for automotive
  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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