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F3L8MR12W2M1HP_B11
  • F3L8MR12W2M1HP_B11

F3L8MR12W2M1HP_B11

Active and preferred

EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology .

Infineon Technologies F3L8MR12W2M1HP_B11 Product Info

16 April 2026 0

Parameters

Applications

Solar, UPS, SST, ESS, EV Charger

Configuration

3-Level

Dimensions (width)

48 mm

Dimensions (length)

56.7 mm

Features

PressFIT, TIM

Housing

Easy 2B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

8.1 mΩ

Apps

Battery energy storage (BESS), EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best-in-class package: 12 mm height
  • Easy module packages
  • Very low module stray inductance
  • Low and equal gate inductances
  • Symmetrical internal chip layouts
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET
  • Gate drive vol.: +15…+18 V & 0…-5 V
  • Max. gate-source v.: +23 V & -10 V
  • Tvjop under overload condi. < 175°C
  • PressFIT pins
  • Thermal interface material

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