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1ED3125MU12F
  • 1ED3125MU12F

1ED3125MU12F

Active and preferred

EiceDRIVER™ Compact single-channel isolated gate driver with 10 A typical sinking and sourcing peak output current in DSO-8 narrow-body package for IGBTs, MOSFETs and SiC MOSFETs. It offers active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

Infineon Technologies 1ED3125MU12F Product Info

16 April 2026 0

Parameters

Channels

1

Configuration

High-side

Input Vcc range

3.1 V to 17 V

Isolation Type

Galvanic isolation - Functional

Output Current (Source)

10 A

Output Current (Sink)

9 A

Package

PG-DSO-8

PDout

500 mW

Product Name

1ED3125MU12F

Qualification

Industrial

RDSON_H(max)

0.65 Ω

RDSON_H(typ)

0.38 Ω

RDSON_L (max)

0.6 Ω

RDSON_L(typ)

0.28 Ω

RthJA

151 K/W

Turn Off Propagation Delay

90 ns

Turn On Propagation Delay

90 ns

VBS UVLO (On)

12.5 V

VBS UVLO (Off)

10.5 V

VCC UVLO (On)

3.1 V

VCC UVLO (Off)

2.5 V

Voltage Class

2300 V

Apps

Server power supply units (PSU), Medium voltage IBC (48 V), Edge computing, EV charging, DIN rail power supply solutions, Photovoltaic, 1-phase string inverter solutions, Motor control, Uninterruptible power supplies (UPS)

Features

  • Single channel isolated gate driver
  • For up to 2300 V Si & SiC switches
  • 2300 V funct. offset volt. capable
  • Galv. isolated coreless transformer
  • 10 A typ sink & source peak output
  • 40 V absolute max. output voltage
  • 90 ns propagation delay
  • High CMTI >200 kV/μs
  • Active Miller clamp
  • Short-circuit clamping
  • DSO-8 150 mil narrow-body package
  • UVLO protection with hysteresis

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