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IMY120R036AM2H
  • IMY120R036AM2H

IMY120R036AM2H

Active and preferred

The CoolSiC™ MOSFET hybrid discrete 1200 V, 36 mΩ G2, housed in a TO-247-4-pin package, combines the advanced capabilities of Generation 2 MOSFET technology with a Soft-Switching 1200 V, 75 A Emitter-Controlled 7 Silicon Diode. Designed specifically for solar MPPT stages, this innovative solution delivers enhanced performance for compact, reliable, and cost-optimized systems.

Infineon Technologies IMY120R036AM2H Product Info

16 April 2026 0

Parameters

Ciss

1473 pF

Coss

84 pF

ID (@25°C) max

44 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

PG-TO247-4-U10

Pin Count

4 Pins

Polarity

N

Ptot (@ TA=25°C) max

171 W

Qgd

8.2 nC

QG

37 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

36 mΩ

RthJA max

62 K/W

RthJC max

0.87 K/W

Technology

CoolSiC™ G2

Tj max

175 °C

VDS max

1200 V

Apps

Photovoltaic

Features

  • RDS = 36 mΩ at VGS = 18 V, Tvj = 25°C
  • Reverse-polarity protection diode
  • Diode IF = 76 A at Tc = 100°C
  • Very low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V
  • Robust against parasitic turn on
  • Soft and low Qrr diode with VF = 1.6 V at Tc = 175°C

Description

  • Optimized performance
  • Highly reliable
  • Higher power density
  • Better energy efficiency
  • Ease of use

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